標題: Titlebook: GaN-Based Laser Diodes; Towards Longer Wavel Wolfgang G. Scheibenzuber Book 2012 Springer-Verlag Berlin Heidelberg 2012 Green Laser Diode.O [打印本頁] 作者: 航天飛機 時間: 2025-3-21 19:43
書目名稱GaN-Based Laser Diodes影響因子(影響力)
書目名稱GaN-Based Laser Diodes影響因子(影響力)學科排名
書目名稱GaN-Based Laser Diodes網(wǎng)絡公開度
書目名稱GaN-Based Laser Diodes網(wǎng)絡公開度學科排名
書目名稱GaN-Based Laser Diodes被引頻次
書目名稱GaN-Based Laser Diodes被引頻次學科排名
書目名稱GaN-Based Laser Diodes年度引用
書目名稱GaN-Based Laser Diodes年度引用學科排名
書目名稱GaN-Based Laser Diodes讀者反饋
書目名稱GaN-Based Laser Diodes讀者反饋學科排名
作者: Kidney-Failure 時間: 2025-3-21 22:36
Wolfgang G. ScheibenzuberSignificant contribution to expanding the spectral range of low-cost green laser diodes.Useful survey of the physics of GaN-based laser diodes.Nominated as an outstanding thesis by the Institute of Ad作者: Fabric 時間: 2025-3-22 02:28 作者: 可憎 時間: 2025-3-22 07:24
P. W. Brennecke,E. W. Justi,J. Kleinw?chter devices due to ohmic losses and non-radiative recombination is a limiting factor, as an increase in device temperature results in a reduction of output power, a redshift of the emission wavelength, and thermal lensing. Therefore it is crucial to investigate the mechanisms of self-heating in laser diodes.作者: 確保 時間: 2025-3-22 10:25
The Clinical Blurring-Speed Study, violet and blue laser diodes are available as commercial products, green laser diodes still suffer from high threshold currents and low output power. The worse performance of green laser diodes originates from the high indium content in the quantum wells, which is necessary to achieve green emission.作者: Ancestor 時間: 2025-3-22 13:46
https://doi.org/10.1007/978-1-4684-9199-9al losses at a low pump current. The optical gain is a function of charge carrier density in the quantum wells, which is proportional to the product of current and charge carrier lifetime. A reduction of threshold current can thus be achieved by optimizing the active region for a long carrier lifetime.作者: Ancestor 時間: 2025-3-22 17:19 作者: 夾克怕包裹 時間: 2025-3-22 21:44 作者: 香料 時間: 2025-3-23 03:31
Light Propagation and Amplification in Laser Diodes from Violet to Green, violet and blue laser diodes are available as commercial products, green laser diodes still suffer from high threshold currents and low output power. The worse performance of green laser diodes originates from the high indium content in the quantum wells, which is necessary to achieve green emission.作者: Shuttle 時間: 2025-3-23 06:12
Dynamics of Charge Carriers and Photons,al losses at a low pump current. The optical gain is a function of charge carrier density in the quantum wells, which is proportional to the product of current and charge carrier lifetime. A reduction of threshold current can thus be achieved by optimizing the active region for a long carrier lifetime.作者: Critical 時間: 2025-3-23 13:41 作者: 可商量 時間: 2025-3-23 15:02 作者: Truculent 時間: 2025-3-23 19:05 作者: 禁止,切斷 時間: 2025-3-24 00:30
GaN-Based Laser Diodes978-3-642-24538-1Series ISSN 2190-5053 Series E-ISSN 2190-5061 作者: ANTIC 時間: 2025-3-24 06:25
https://doi.org/10.1007/b106969er communications and data storage on CDs and DVDs. The red and infrared laser diodes for these applications are based on the III-IV semiconductor systems AlGaInP and InGaAsP and they are commercially available for a broad spectrum of emission wavelengths.作者: LITHE 時間: 2025-3-24 10:00
P. W. Brennecke,E. W. Justi,J. Kleinw?chter devices due to ohmic losses and non-radiative recombination is a limiting factor, as an increase in device temperature results in a reduction of output power, a redshift of the emission wavelength, and thermal lensing. Therefore it is crucial to investigate the mechanisms of self-heating in laser d作者: GRATE 時間: 2025-3-24 11:51 作者: strdulate 時間: 2025-3-24 18:28 作者: 可以任性 時間: 2025-3-24 22:58 作者: disrupt 時間: 2025-3-25 00:30 作者: Dysplasia 時間: 2025-3-25 06:10 作者: Paleontology 時間: 2025-3-25 07:54
Book 2012s describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.作者: 異端邪說2 時間: 2025-3-25 13:24 作者: 老人病學 時間: 2025-3-25 18:42
https://doi.org/10.1007/978-1-4612-6000-4undamental limitation for quantum well devices grown on c-plane GaN. Hence it is doubtful whether further improvements in growth conditions and heterostructure design can enable the fabrication of green laser diodes with an output power of several hundred mW and a sufficiently long device lifetime.作者: Employee 時間: 2025-3-25 22:04 作者: minion 時間: 2025-3-26 00:58 作者: 純樸 時間: 2025-3-26 07:04
Summary and Conclusions,ate individual contributions to certain phenomena. Although the models presented here are simplified and in most cases not suitable for quantitative predictions, their strength lies in their versatility and compactness, providing a qualitative understanding of trends at a comparably low numerical effort.作者: 吞吞吐吐 時間: 2025-3-26 09:01
Book 2012l data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesi作者: DECRY 時間: 2025-3-26 16:36 作者: Intellectual 時間: 2025-3-26 19:44 作者: oblique 時間: 2025-3-26 21:25
2190-5053 achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.978-3-642-43548-5978-3-642-24538-1Series ISSN 2190-5053 Series E-ISSN 2190-5061 作者: 辯論 時間: 2025-3-27 02:51 作者: Alpha-Cells 時間: 2025-3-27 06:35
Thermal Properties, devices due to ohmic losses and non-radiative recombination is a limiting factor, as an increase in device temperature results in a reduction of output power, a redshift of the emission wavelength, and thermal lensing. Therefore it is crucial to investigate the mechanisms of self-heating in laser d作者: ELATE 時間: 2025-3-27 11:03 作者: LIMIT 時間: 2025-3-27 16:54 作者: Coordinate 時間: 2025-3-27 20:39 作者: AUGER 時間: 2025-3-28 01:41
Short-Pulse Laser Diodes, the improvement of maximum output power and efficiency. The principal device concept is the Fabry-Perot-type single-section ridge laser diode. Other device concepts, which have been extensively studied in the group-III-arsenide and -phosphide material systems, are scarcely implemented in the nitrid作者: LIMIT 時間: 2025-3-28 04:34
Summary and Conclusions,n wavelength and realize true-green laser diodes for projection and display applications. Furthermore, it covers the realization of multi-section laser diodes on GaN, a device concept for the generation of short pulses, which is successfully adapted from infrared laser diodes. Spectral and temporal 作者: 牢騷 時間: 2025-3-28 09:49 作者: Abjure 時間: 2025-3-28 12:18
Was hei?t Stre??ich Monotonie und Gleichf?rmigkeit bestimmter Arbeitsroutinen noch hinzu, dann hei?t dies, da? die H?lfte aller arbeitsbezogenen Belastungen eine Form von Stre? darstellt. Erst danach kommen rein physische Aspekte wie L?rm, Hitze, Staub, Geruch und sonstige Bel?stigungen hinzu (vgl. Tabelle 1).
