標(biāo)題: Titlebook: Device Physics, Modeling, Technology, and Analysis for Silicon MESFET; Iraj Sadegh Amiri,Hossein Mohammadi,Mahdiar Hossei Book 2019 Spring [打印本頁] 作者: GRASS 時(shí)間: 2025-3-21 18:38
書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET影響因子(影響力)
書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET影響因子(影響力)學(xué)科排名
書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET網(wǎng)絡(luò)公開度
書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET被引頻次
書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET被引頻次學(xué)科排名
書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET年度引用
書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET年度引用學(xué)科排名
書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET讀者反饋
書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET讀者反饋學(xué)科排名
作者: 掙扎 時(shí)間: 2025-3-21 22:40
Device Physics, Modeling, Technology, and Analysis for Silicon MESFET978-3-030-04513-5作者: eczema 時(shí)間: 2025-3-22 00:35
rehensive information on the structure and operation of sili.This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device.? The authors explain the detailed physics that a作者: adroit 時(shí)間: 2025-3-22 04:34 作者: 輕信 時(shí)間: 2025-3-22 10:30
https://doi.org/10.1007/978-3-030-98507-3, we develop a modified two-dimensional analytical model for the device which is free of the problems associated with the previous models. By using the presented model, the subthreshold behavior of the device is displayed and discussed. Also, the impact of device parameters and bias conditions on the device performance is investigated.作者: FLINT 時(shí)間: 2025-3-22 14:35
Analytical Investigation of Subthreshold Performance of SOI MESFET Devices,mpared with the conventional SOI MESFET. Also, the improvement in short-channel behavior of the presented devices is shown. Lastly, the TCAD simulation for each device is accomplished. The accuracy of the presented analytical models is verified by comparison with the numerical simulation results obtained by device simulator ATLAS from Silvaco.作者: FLINT 時(shí)間: 2025-3-22 20:49
re important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications..978-3-030-04513-5作者: 發(fā)電機(jī) 時(shí)間: 2025-3-22 21:41
Book 2019with modeling and analysis of the device.? The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also incl作者: 強(qiáng)制性 時(shí)間: 2025-3-23 04:31
,General Overview of the Basic Structure and Operation of a Typical Silicon on Insulator Metal–Semicheir influence on the normal operation of MOS transistors are described. The different technical solutions presented to resolve the problems caused by short-channel effects are discussed. Finally, the structures and advantages of non-classical devices and their feasibility in the settling of the short-channel effects are described.作者: 背帶 時(shí)間: 2025-3-23 08:00
Modeling of Classical SOI MESFET,, we develop a modified two-dimensional analytical model for the device which is free of the problems associated with the previous models. By using the presented model, the subthreshold behavior of the device is displayed and discussed. Also, the impact of device parameters and bias conditions on the device performance is investigated.作者: Ankylo- 時(shí)間: 2025-3-23 12:26 作者: Scintillations 時(shí)間: 2025-3-23 17:51
Economic Growth and , in Africampared with the conventional SOI MESFET. Also, the improvement in short-channel behavior of the presented devices is shown. Lastly, the TCAD simulation for each device is accomplished. The accuracy of the presented analytical models is verified by comparison with the numerical simulation results obtained by device simulator ATLAS from Silvaco.作者: Scintigraphy 時(shí)間: 2025-3-23 20:36
Iraj Sadegh Amiri,Hossein Mohammadi,Mahdiar HosseiDescribes the evolution of MESFET in the semiconductor industry.Discusses challenges and solutions associated with downscaling.Provides comprehensive information on the structure and operation of sili作者: 跳脫衣舞的人 時(shí)間: 2025-3-23 22:59 作者: ODIUM 時(shí)間: 2025-3-24 02:27
https://doi.org/10.1007/978-3-030-04513-5MOS transistors; SOI-MESFET; silicon MESFET; MESFET-CMOS; Complementary SOI MESFETs作者: 后天習(xí)得 時(shí)間: 2025-3-24 09:47
Springer Nature Switzerland AG 2019作者: 壯觀的游行 時(shí)間: 2025-3-24 10:46
International Handbooks of Quality-of-LifeIn this chapter, a new non-classical MESFET design “triple-material gate SOI MESFET” is introduced and expected to exhibit better short-channel performance. Two-dimensional analytical model of the device is derived to describe the performance of the device including surface potential, threshold voltage, and subthreshold swing.作者: 纖細(xì) 時(shí)間: 2025-3-24 15:50
Zikani Kaunda,Nancy Kendall,Upenyu MajeeIn this chapter, the non-classical “Three-gate SOI MESFET” is introduced and investigated by developing a three-dimensional analytical model for surface potential and threshold voltage. The model is derived by solving the 3-D Poisson’s equation in the channel of the device using appropriate boundary conditions.作者: Manifest 時(shí)間: 2025-3-24 19:46
Design and Modeling of Triple-Material Gate SOI MESFET,In this chapter, a new non-classical MESFET design “triple-material gate SOI MESFET” is introduced and expected to exhibit better short-channel performance. Two-dimensional analytical model of the device is derived to describe the performance of the device including surface potential, threshold voltage, and subthreshold swing.作者: 痛打 時(shí)間: 2025-3-25 01:47
Three-Dimensional Analytical Model of the Non-Classical Three-Gate SOI MESFET,In this chapter, the non-classical “Three-gate SOI MESFET” is introduced and investigated by developing a three-dimensional analytical model for surface potential and threshold voltage. The model is derived by solving the 3-D Poisson’s equation in the channel of the device using appropriate boundary conditions.作者: ABYSS 時(shí)間: 2025-3-25 03:52 作者: Dendritic-Cells 時(shí)間: 2025-3-25 09:04
Cultural Humility, a Path to Equitys related to scaling are explained. A detailed description of the origin and impact of various short-channel effects associated with downscaling and their influence on the normal operation of MOS transistors are described. The different technical solutions presented to resolve the problems caused by作者: canvass 時(shí)間: 2025-3-25 11:56 作者: 褪色 時(shí)間: 2025-3-25 17:48
Economic Growth and , in Africa parameters like dimensions of the channel, doping concentration, buried oxide thickness, and applied biases. For all three devices, the profile of surface potential and threshold voltage are plotted and discussed. The characteristics and excellence of the devices under study are investigated and co作者: opalescence 時(shí)間: 2025-3-25 21:25
Nokuthula Vilakazi,Sheryl L. Hendrikswe introduced and discussed the previous analytical models presented for classical SOI MESFET developed in recent years and then we offered a new exact analytical model to display the subthreshold behavior of the device. The proposed non-classical architecture presented in this study can be well ext作者: affinity 時(shí)間: 2025-3-26 03:57 作者: 內(nèi)閣 時(shí)間: 2025-3-26 04:38 作者: 沒有準(zhǔn)備 時(shí)間: 2025-3-26 08:46 作者: Chameleon 時(shí)間: 2025-3-26 13:25
,Future Works on Silicon-on-Insulator Metal–Semiconductor Field Effect Transistors (SOI MESFETs),we introduced and discussed the previous analytical models presented for classical SOI MESFET developed in recent years and then we offered a new exact analytical model to display the subthreshold behavior of the device. The proposed non-classical architecture presented in this study can be well extended to partially depleted SOI MESFETs.作者: 包裹 時(shí)間: 2025-3-26 18:13
Invention and Evaluation of Transistors and Integrated Circuits,sistors and integrated circuits are briefly presented. After that, the concept of scaling, Moore’s law, and international technology roadmap for semiconductor (ITRS) are explained. Finally, the research objectives, the scope of the work, plan, and the outline of the book are expressed.作者: Blood-Clot 時(shí)間: 2025-3-27 00:12 作者: 愛好 時(shí)間: 2025-3-27 04:53 作者: Albumin 時(shí)間: 2025-3-27 08:18
Analytical Investigation of Subthreshold Performance of SOI MESFET Devices, parameters like dimensions of the channel, doping concentration, buried oxide thickness, and applied biases. For all three devices, the profile of surface potential and threshold voltage are plotted and discussed. The characteristics and excellence of the devices under study are investigated and co作者: biopsy 時(shí)間: 2025-3-27 09:28
,Future Works on Silicon-on-Insulator Metal–Semiconductor Field Effect Transistors (SOI MESFETs),we introduced and discussed the previous analytical models presented for classical SOI MESFET developed in recent years and then we offered a new exact analytical model to display the subthreshold behavior of the device. The proposed non-classical architecture presented in this study can be well ext作者: Priapism 時(shí)間: 2025-3-27 15:30 作者: armistice 時(shí)間: 2025-3-27 19:19 作者: Latency 時(shí)間: 2025-3-28 01:18
Krau?-Meldau,Joseph Krau?,Walter Steintaat hat deshalb diesen Gegenst?nden in neuester Zeit wieder eine erh?hte Aufmerksamkeit zuwenden müssen. Er hat nicht nur einzelne Verwaltungszweige ganz an sich gezogen, wie die Eisenbahnen, sondern auch in der Regelung der Haftpflicht, der Frauen- und Kinderarbeit und des Arbeiterschu?es unmittel作者: Loathe 時(shí)間: 2025-3-28 05:57 作者: MIR 時(shí)間: 2025-3-28 09:45 作者: BLAND 時(shí)間: 2025-3-28 11:19 作者: 鬼魂 時(shí)間: 2025-3-28 18:14
