標題: Titlebook: Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs; Bernhard Wicht Book 2003 Springer-Verlag Berlin H [打印本頁] 作者: magnify 時間: 2025-3-21 17:29
書目名稱Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs影響因子(影響力)
書目名稱Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs影響因子(影響力)學科排名
書目名稱Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs網(wǎng)絡(luò)公開度
書目名稱Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs網(wǎng)絡(luò)公開度學科排名
書目名稱Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs被引頻次
書目名稱Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs被引頻次學科排名
書目名稱Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs年度引用
書目名稱Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs年度引用學科排名
書目名稱Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs讀者反饋
書目名稱Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs讀者反饋學科排名
作者: 拉開這車床 時間: 2025-3-21 21:37 作者: Mendacious 時間: 2025-3-22 02:58
Analysis and Compensation of the Bitline Multiplexer,2.3). An important issue is the position of these multiplexers [38]. If they are placed behind the sense amplifiers, each column requires one amplifier. This increases power dissipation and area. In order to match the pitch of the sense amplifiers with the bitline pitch, the sensing circuit must be 作者: GORGE 時間: 2025-3-22 07:46 作者: embolus 時間: 2025-3-22 12:13 作者: Jargon 時間: 2025-3-22 13:49 作者: Jargon 時間: 2025-3-22 20:29
#MeToo and the Reasons To Be Cautiousng to Fig. 2.4 they can be implemented in voltage sensed SRAM but also in current sensed SRAMs as a second stage. In SRAM all these circuits are basically analog comparators. A wide range of circuits are used. In general they can be classified into static and dynamic circuits. Sect. 3.1 gives an ove作者: 祖?zhèn)髫敭a(chǎn) 時間: 2025-3-23 00:14 作者: 包租車船 時間: 2025-3-23 04:36 作者: Aspiration 時間: 2025-3-23 07:53
Pansheng Fang,Zhaolong Ning,Xiping Hu this includes CMOS camera chips [117]. Due to its excellent speed in the presence of large input capacitances, current sense amplifiers can also be used as receivers for signal transmission along highly capacitive busses [35, 49]. Beside speed, another advantage is important for read-only memory (R作者: Mangle 時間: 2025-3-23 13:32
Bernhard WichtComprehensive theoretical and practical information on current sensing for SRAM is provided in this book for the first time.Includes supplementary material: 作者: 衣服 時間: 2025-3-23 14:27
Springer Series in Advanced Microelectronicshttp://image.papertrans.cn/d/image/241314.jpg作者: Inordinate 時間: 2025-3-23 22:05 作者: 未完成 時間: 2025-3-24 01:23
5G for Future Wireless NetworksThe write operation of the static 6-transistor memory cell described in Sect. 2.1 requires the bitline potential to be lowered until the cell toggles. While this inherent property of the memory cell is essential for writing it also represents a source for failure as an unwanted toggling may occur outside of the write cycle, especially during read.作者: EXUDE 時間: 2025-3-24 05:45 作者: 騷擾 時間: 2025-3-24 10:28
Interaction with the Memory Cell,The write operation of the static 6-transistor memory cell described in Sect. 2.1 requires the bitline potential to be lowered until the cell toggles. While this inherent property of the memory cell is essential for writing it also represents a source for failure as an unwanted toggling may occur outside of the write cycle, especially during read.作者: optic-nerve 時間: 2025-3-24 13:26 作者: 反叛者 時間: 2025-3-24 15:03 作者: Myelin 時間: 2025-3-24 21:35
Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs978-3-662-06442-9Series ISSN 1437-0387 Series E-ISSN 2197-6643 作者: Vulvodynia 時間: 2025-3-25 01:53
https://doi.org/10.1007/978-3-030-17513-9le current sense amplifier. The focus will be on an implementation of Type D in a 130nm CMOS process technology with 1.5V being the nominal supply voltage. The outstanding properties of Type D current sensing in terms of speed, multiplexer compensation and operation at low supply voltages have been shown in Chaps. 4 and 5.作者: harpsichord 時間: 2025-3-25 06:44 作者: MUTE 時間: 2025-3-25 10:22 作者: lethal 時間: 2025-3-25 12:09
Voltage Sense Amplifiers,ally analog comparators. A wide range of circuits are used. In general they can be classified into static and dynamic circuits. Sect. 3.1 gives an overview while in Sect. 3.2 a circuit is investigated in detail that makes an excellent second stage in a current sense amplifier.作者: 預(yù)測 時間: 2025-3-25 17:31 作者: abysmal 時間: 2025-3-25 21:23 作者: forestry 時間: 2025-3-26 03:33
Pansheng Fang,Zhaolong Ning,Xiping HuOM). Depending on the data contents a ROM bitline can become floating and, hence, become very sensitive to capacitive coupling and crosstalk. Since current sensing establishes a low input impedance, it prevents the bitlines from being floating. As it suppresses a bitline voltage swing, it also eliminates coupling from adjacent bitlines.作者: flourish 時間: 2025-3-26 05:01
Introduction, is projected [5] that the delay of integrated logic gates will continue to scale exponentially. This will result in a considerable increase in signal processing speed. The microprocessor clock frequency has been doubling every two years and will reach about 5GHz in 2005.作者: Default 時間: 2025-3-26 09:19
Analysis and Compensation of the Bitline Multiplexer,very simple. Therefore in many SRAM designs the multiplexer (MUX) is located between the columns and the sense amplifier as shown in Fig. 5.1 (see also Fig. 2.3). The advantage is that more area can be allocated per sense amplifier as only one sensing block is utilized to read out several multiplexed bitline pairs.作者: 誘拐 時間: 2025-3-26 13:16 作者: nerve-sparing 時間: 2025-3-26 17:34 作者: 軍械庫 時間: 2025-3-26 23:12
#MeToo and the Reasons To Be Cautiousally analog comparators. A wide range of circuits are used. In general they can be classified into static and dynamic circuits. Sect. 3.1 gives an overview while in Sect. 3.2 a circuit is investigated in detail that makes an excellent second stage in a current sense amplifier.作者: Servile 時間: 2025-3-27 02:35 作者: 沙發(fā) 時間: 2025-3-27 05:35
Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs作者: 四溢 時間: 2025-3-27 11:38 作者: Tdd526 時間: 2025-3-27 14:02
Risk Factors and Outcome in Fallsrize the porous scaffolds in terms of design, modeling as well as experimental validation. The present article describes the selection of materials, facilitated properties, experimental methods, knowledge of computer to fabricate scaffolds.作者: Affluence 時間: 2025-3-27 19:10 作者: Mystic 時間: 2025-3-28 00:31 作者: Terrace 時間: 2025-3-28 04:36
Michael Schetscheteraction between particles precludes an exact description of the system. In comparison, it has been easier to interpret the fluorescence data from labeled proteins because the fluorophore density and locations could be controlled so the probes did not interact with each other. From the origins of biochemical978-1-4757-8194-6978-0-306-47102-5作者: 摻和 時間: 2025-3-28 06:16 作者: 粗糙 時間: 2025-3-28 12:49 作者: Ornament 時間: 2025-3-28 17:17
Lecture Notes in Intelligent Transportation and Infrastructurehttp://image.papertrans.cn/r/image/822875.jpg作者: GULLY 時間: 2025-3-28 22:17
