標(biāo)題: Titlebook: CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies; Process-Aware SRAM D Andrei Pavlov,Manoj Sachdev Book 2008 Spring [打印本頁] 作者: FETUS 時(shí)間: 2025-3-21 18:07
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書目名稱CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies被引頻次
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書目名稱CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies讀者反饋
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作者: 有組織 時(shí)間: 2025-3-21 21:19 作者: tinnitus 時(shí)間: 2025-3-22 03:53 作者: 假裝是我 時(shí)間: 2025-3-22 05:38 作者: 制定 時(shí)間: 2025-3-22 10:37 作者: 概觀 時(shí)間: 2025-3-22 14:22
0929-1296 l approach to SRAM testing. The emphasis of the book is on challenges and solutions of stability testing as well as on development of understanding of the link between the process technology and SRAM circuit design in modern nano-scaled technologies..978-90-481-7855-1978-1-4020-8363-1Series ISSN 0929-1296 作者: 概觀 時(shí)間: 2025-3-22 17:53 作者: 辮子帶來幫助 時(shí)間: 2025-3-22 23:06 作者: Gene408 時(shí)間: 2025-3-23 03:33 作者: neuron 時(shí)間: 2025-3-23 07:33
Book 2008peration basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. The emphasis of the book is on challenges and solutions of stability testing as well as on development of understanding of the link between the process technology and SRAM circuit design in modern nano-scaled technologies..作者: STERN 時(shí)間: 2025-3-23 10:22
Andrei Pavlov,Manoj SachdevGives a process-aware perspective on SRAM circuit design and test.Provides detailed coverage of SRAM cell stability, stability sensitivity and analytical evaluation of Static Noise Margin.Introduces t作者: PLE 時(shí)間: 2025-3-23 15:23 作者: Buttress 時(shí)間: 2025-3-23 21:07 作者: Canvas 時(shí)間: 2025-3-23 23:57
978-90-481-7855-1Springer Science+Business Media B.V. 2008作者: 勾引 時(shí)間: 2025-3-24 02:59
CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies978-1-4020-8363-1Series ISSN 0929-1296 作者: genesis 時(shí)間: 2025-3-24 09:51 作者: 陰郁 時(shí)間: 2025-3-24 12:43
Bing Zhou,Scott Han,Gabor A. Somorjaiyield constraints. Near minimumsize cell transistors exhibit higher susceptibility with respect to process variations. Thirdly, the cell layout largely determines the SRAM critical area, which is the chip yield limiter. Meeting the design constraints requires deeper understanding of the involved tra作者: 不來 時(shí)間: 2025-3-24 15:25
Surendra P. Shah,Pengkun Hou,Xin Chengole pairs to upset the storage nodes of SRAM cells. Such an upset is called a .. While such an upset can cause a data error, the device structures are not permanently damaged. If the voltage disturbance on a storage node of an SRAM cell is smaller than the noise margin of that node, the cell will co作者: FAR 時(shí)間: 2025-3-24 22:29
SRAM Cell Stability: Definition, Modeling and Testing,作者: 松馳 時(shí)間: 2025-3-24 23:30
Techniques for Detection of SRAM Cells with Stability Faults,作者: 駕駛 時(shí)間: 2025-3-25 06:37
CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled TechnologiesProcess-Aware SRAM D作者: byline 時(shí)間: 2025-3-25 08:27 作者: 朋黨派系 時(shí)間: 2025-3-25 12:36 作者: 寬大 時(shí)間: 2025-3-25 19:50
Soft Errors in SRAMs: Sources, Mechanisms and Mitigation Techniques,ole pairs to upset the storage nodes of SRAM cells. Such an upset is called a .. While such an upset can cause a data error, the device structures are not permanently damaged. If the voltage disturbance on a storage node of an SRAM cell is smaller than the noise margin of that node, the cell will co作者: MEAN 時(shí)間: 2025-3-25 23:08
7樓作者: discord 時(shí)間: 2025-3-26 00:57
7樓作者: Canary 時(shí)間: 2025-3-26 08:22
8樓作者: Albinism 時(shí)間: 2025-3-26 10:42
8樓作者: Palpate 時(shí)間: 2025-3-26 16:07
8樓作者: Constrain 時(shí)間: 2025-3-26 18:20
9樓作者: 脫毛 時(shí)間: 2025-3-27 00:02
9樓作者: annexation 時(shí)間: 2025-3-27 01:55
9樓作者: 閑聊 時(shí)間: 2025-3-27 09:05
9樓作者: etidronate 時(shí)間: 2025-3-27 10:54
10樓作者: aerobic 時(shí)間: 2025-3-27 13:50
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